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UTT65P04L-TA3-T

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Manufacturer No UTT65P04L-TA3-T

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

Price

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Type

Parameter

  • YTEOL

    5.3

  • Objectid

    8265477544

  • ECCN Code

    EAR99

  • Risk Rank

    7.8

  • Rohs Code

    Yes

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    P-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    65 A

  • Transistor Application

    SWITCHING

  • Turn-on Time-Max (ton)

    605 ns

  • DS Breakdown Voltage-Min

    40 V

  • Turn-off Time-Max (toff)

    325 ns

  • Operating Temperature-Max

    175°C

  • Operating Temperature-Min

    -55°C

  • Power Dissipation-Max (Abs)

    120 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    65 A

  • Avalanche Energy Rating (Eas)

    180 mJ

  • Drain-source On Resistance-Max

    0.015 Ω

  • Pulsed Drain Current-Max (IDM)

    240 A

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Qty

Unit Price

Total Price

3145

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