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SIHF9610-E3

Details

Manufacturer No SIHF9610-E3

Manufacturer Vishay Intertechnologies

Category Power Field-Effect Transistors

Datasheet Datasheet

Description TRANSISTOR 1.8 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power

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Type

Parameter

  • YTEOL

    5.85

  • Objectid

    1576693677

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    6.94

  • Rohs Code

    Yes

  • Pbfree Code

    Yes

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    MATTE TIN

  • Part Package Code

    TO-220AB

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    P-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    1.8 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    200 V

  • Operating Temperature-Max

    150°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    20 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    1.8 A

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    3 Ω

  • Pulsed Drain Current-Max (IDM)

    7 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

3150

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