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SPP08P06PHKSA1

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Manufacturer No SPP08P06PHKSA1

Manufacturer Infineon Technologies AG

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

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Type

Parameter

  • YTEOL

    5.12

  • Objectid

    8074339290

  • ECCN Code

    EAR99

  • Risk Rank

    7.59

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Source Content uid

    SPP08P06PHKSA1

  • Number of Terminals

    3

  • Package Description

    ROHS COMPLIANT, TO-220, 3 PIN

  • Part Life Cycle Code

    Active

  • Samacsys Modified On

    2020-11-30 19:47:12

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    P-CHANNEL

  • Reach Compliance Code

    compliant

  • Samacsys Manufacturer

    Infineon

  • Drain Current-Max (ID)

    8.8 A

  • DS Breakdown Voltage-Min

    60 V

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    70 mJ

  • Drain-source On Resistance-Max

    0.3 Ω

  • Pulsed Drain Current-Max (IDM)

    35.2 A

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Qty

Unit Price

Total Price

3282

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SPP08P06PHXKSA1

Infineon Technologies AG

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SPB08P06PG

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