Details
Manufacturer No IRF9Z34NPBF
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Price
$1.102
Type
Parameter
ECCN Code
EAR99
Rohs Code
Yes
Popularity
2411
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Factory Lead Time
52 weeks
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Number of Elements
1
Source Content uid
IRF9Z34NPBF
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
19 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
68 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
19 A
Avalanche Energy Rating (Eas)
180 mJ
Peak Reflow Temperature (Cel)
250
Drain-source On Resistance-Max
0.1 Ω
Pulsed Drain Current-Max (IDM)
68 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$1.06894
$1.06894
50
$1.01384
$50.692
100
$0.98078
$98.078
1000
$0.9367
$936.7
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