Details
Manufacturer No RFP15P06
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Price
Call
Type
Parameter
Objectid
1546487654
ECCN Code
EAR99
Risk Rank
9.75
Rohs Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
MEGAFET
Number of Elements
1
Source Content uid
RFP15P06
Number of Terminals
3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
15 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
80 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
15 A
Drain-source On Resistance-Max
0.15 Ω
Send RFQ
Qty
Unit Price
Total Price
3126
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method