Details
Manufacturer No IRF9Z32
Manufacturer SAMSUNG SEMICONDUCTOR INC
Category Unclassified
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
Pbfree
ECCN Code
EAR99
Inventory
In Stock
Pin Count
3
RoHS Status
Non-RoHS Compliant
Subcategory
Other Transistors
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Additional Feature
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
Transistor Application
SWITCHING
Turn On Time-Max (ton)
188ns
DS Breakdown Voltage-Min
50V
Turn Off Time-Max (toff)
128ns
Operating Temperature (Max)
150°C
Power Dissipation-Max (Abs)
74W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
15A
Avalanche Energy Rating (Eas)
13 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Power Dissipation Ambient-Max
74W
Drain-source On Resistance-Max
0.21Ohm
Pulsed Drain Current-Max (IDM)
50A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
21358
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