Details
Manufacturer No UTT65P04G-TA3-T
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
Price
Call
Type
Parameter
YTEOL
5.25
Objectid
8265477543
ECCN Code
EAR99
Risk Rank
7.8
Rohs Code
Yes
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
65 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
605 ns
DS Breakdown Voltage-Min
40 V
Turn-off Time-Max (toff)
325 ns
Operating Temperature-Max
175°C
Operating Temperature-Min
-55°C
Power Dissipation-Max (Abs)
120 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
65 A
Avalanche Energy Rating (Eas)
180 mJ
Drain-source On Resistance-Max
0.015 Ω
Pulsed Drain Current-Max (IDM)
240 A
Send RFQ
Qty
Unit Price
Total Price
3144
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method