Mfr

Harris Corporation

Series

-

Package

Bulk

FET Type

P-Channel

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Product Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C~175°C(TJ)

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Power Dissipation (Max)

150W (Tc)

Supplier Device Package

TO-220-3

Gate Charge (Qg) (Max) @ Vgs

90 nC @ 10 V

Drain to Source Voltage (Vdss)

80 V

Input Capacitance (Ciss) (Max) @ Vds

1100 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)