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FX6UMH-06

Details

Manufacturer No FX6UMH-06

Manufacturer Powerex Power Semiconductors

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 6A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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Type

Parameter

  • Objectid

    1423899122

  • ECCN Code

    EAR99

  • Risk Rank

    9.83

  • Rohs Code

    No

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    P-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    6 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    60 V

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    6 A

  • Drain-source On Resistance-Max

    0.23 Ω

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Qty

Unit Price

Total Price

3878

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