ECCN Code

EAR99

Pin Count

3

Brand Name

STMicroelectronics

Popularity

1187

Subcategory

FET General Purpose Power

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Date Of Intro

1980-01-04

JEDEC-95 Code

TO-263AB

JESD-609 Code

e3

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Surface Mount

YES

Terminal Form

GULL WING

FET Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Terminal Finish

Matte Tin (Sn) - annealed

Factory Lead Time

52 weeks

Part Package Code

D2PAK

Terminal Position

SINGLE

Number of Elements

1

Source Content uid

STB11NM60T4

Number of Terminals

2

Package Description

D2PAK-3

Part Life Cycle Code

Active

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Polarity/Channel Type

N-CHANNEL

Reach Compliance Code

not_compliant

Drain Current-Max (ID)

11 A

Transistor Application

SWITCHING

DS Breakdown Voltage-Min

600 V

Operating Temperature-Max

150°C

Moisture Sensitivity Level

1

Power Dissipation-Max (Abs)

160 W

Transistor Element Material

SILICON

Drain Current-Max (Abs) (ID)

11 A

Avalanche Energy Rating (Eas)

350 mJ

Peak Reflow Temperature (Cel)

245

Drain-source On Resistance-Max

0.45 Ω

Pulsed Drain Current-Max (IDM)

44 A

Time@Peak Reflow Temperature-Max (s)

30