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SIHB12N60E-GE3

Details

Manufacturer No SIHB12N60E-GE3

Manufacturer Vishay Siliconix

Category Power Field-Effect Transistors

Datasheet Datasheet

Description MOSFET N CH 600V 12A TO263

Price

$2.58

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Popularity

    361

  • Subcategory

    FET General Purpose Powers

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    12 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    600 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    147 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    12 A

  • Avalanche Energy Rating (Eas)

    117 mJ

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Drain-source On Resistance-Max

    0.38 Ω

  • Pulsed Drain Current-Max (IDM)

    27 A

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

1

$2.5026

$2.5026

50

$2.3736

$118.68

100

$2.2962

$229.62

1000

$2.193

$2193

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