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IXTA14N60P

Details

Manufacturer No IXTA14N60P

Manufacturer IXYS

Category MOSFET

Package TO-263-3

Datasheet Datasheet

Description MOSFET 14.0 Amps 600 V 0.55 Ohm Rds

Price

$5.17

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Type

Parameter

  • RoHS

    Details

  • Type

    PolarHV Power MOSFET

  • Brand

    IXYS

  • Width

    10.41 mm

  • Height

    4.83 mm

  • Length

    9.65 mm

  • Series

    IXTA14N60

  • Fall Time

    26 ns

  • Packaging

    Tube

  • Rise Time

    27 ns

  • Tradename

    PolarHV

  • Technology

    Si

  • Subcategory

    MOSFETs

  • Unit Weight

    0.056438 oz

  • Channel Mode

    Enhancement

  • Manufacturer

    IXYS

  • Product Type

    MOSFET

  • Configuration

    Single

  • Mounting Style

    SMD/SMT

  • Package / Case

    TO-263-3

  • Transistor Type

    1 N-Channel

  • Product Category

    MOSFET

  • Qg - Gate Charge

    36 nC

  • Number of Channels

    1 Channel

  • Transistor Polarity

    N-Channel

  • Pd - Power Dissipation

    300 W

  • Vgs - Gate-Source Voltage

    - 30 V, + 30 V

  • Typical Turn-On Delay Time

    23 ns

  • Typical Turn-Off Delay Time

    70 ns

  • Id - Continuous Drain Current

    14 A

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • Forward Transconductance - Min

    7 S

  • Rds On - Drain-Source Resistance

    450 mOhms

  • Vds - Drain-Source Breakdown Voltage

    600 V

  • Vgs th - Gate-Source Threshold Voltage

    5.5 V

  • Factory Pack Quantity: Factory Pack Quantity

    50

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Qty

Unit Price

Total Price

1

$5.0149

$5.0149

50

$4.7564

$237.82

100

$4.6013

$460.13

1000

$4.3945

$4394.5

Substitute Products

IXTQ14N60P

IXYS Semiconductor

Trans MOSFET P-CH 600V 14A 3Pin(3+Tab) TO-3P

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IXTP14N60P

IXYS Semiconductor

Trans MOSFET P-CH 600V 14A 3Pin(3+Tab) TO-220

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IXTP14N60P

Littelfuse Inc

Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IXTQ14N60P

Littelfuse Inc

Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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