SPB11N60S5

Details

Manufacturer No SPB11N60S5

Manufacturer infineon

Category 500V-950V N-Channel Power MOSFET

Package D2PAK (TO-263)

Datasheet Datasheet

Description

Price

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Type

Parameter

  • Package

    D2PAK (TO-263)

  • Mounting

    SMT

  • Polarity

    N

  • Q<sub>G</sub>

    41.5nC

  • R<sub>th</sub>

    1.0K/W

  • I<sub>D </sub> max

    11.0A

  • V<sub>DS</sub> max

    600.0V

  • P<sub>tot</sub> max

    125.0W

  • R<sub>thJC</sub> max

    1.0K/W

  • I<sub>Dpuls</sub> max

    22.0A

  • Q<sub>G</sub>(typ @10V)

    41.5nC

  • R<sub>DS (on)</sub> max

    380.0m&#x2126;

  • I<sub>D </sub>(@25°C) max

    11.0A

  • V<sub>GS(th)</sub> min max

    3.5V 5.5V

  • R<sub>DS (on)</sub>(@10V) max

    380.0m&#x2126;

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Qty

Unit Price

Total Price

11598

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Substitute Products

SPB11N60S5

Siemens Semiconductor

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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SIHB12N60E

Vishay

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STB11NM60T4

St

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IXTA14N60P

Ixys

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SPB11N60S5

Infineon

D2PAK N-CH 600V 11A

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