Details
Manufacturer No FCB11N60TM
Manufacturer onsemi
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK, 800-REEL
Price
$3.05
Type
Parameter
ECCN Code
EAR99
Brand Name
onsemi
Popularity
1132
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Factory Lead Time
33 weeks
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FCB11N60TM
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Not Recommended
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Manufacturer Package Code
418AJ
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
11 A
Avalanche Energy Rating (Eas)
340 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.38 Ω
Pulsed Drain Current-Max (IDM)
33 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$2.9585
$2.9585
50
$2.806
$140.3
100
$2.7145
$271.45
1000
$2.5925
$2592.5
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