MJD122-TP-HF

Details

Manufacturer No MJD122-TP-HF

Manufacturer Micro Commercial Components

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor,

Price

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Type

Parameter

YTEOL

7.8
HTS Code

8541.29.00.95
Objectid

1288128229
ECCN Code

EAR99
Risk Rank

6.79
Rohs Code

Yes
VCEsat-Max

4 V
JESD-30 Code

R-PSSO-G2
Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code

TO-252
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Case Connection

COLLECTOR
Country Of Origin

Mainland China
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Part Life Cycle Code

Active
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

not_compliant
DC Current Gain-Min (hFE)

100
Operating Temperature-Max

150°C
Operating Temperature-Min

-55°C
Collector Current-Max (IC)

8 A
Moisture Sensitivity Level

1
Power Dissipation-Max (Abs)

1.5 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

100 V
Peak Reflow Temperature (Cel)

260
Power Dissipation Ambient-Max

1.5 W
Collector-Base Capacitance-Max

200 pF
Time@Peak Reflow Temperature-Max (s)

10

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Qty

Unit Price

Total Price

3152

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