Details
Manufacturer No KSH122-TF
Manufacturer Samsung Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Price
Call
Type
Parameter
HTS Code
8541.29.00.95
ECCN Code
EAR99
Popularity
4
VCEsat-Max
4 V
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Collector-Base Capacitance-Max
200 pF
Send RFQ
Qty
Unit Price
Total Price
21086
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method