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CJD122TR13

Details

Manufacturer No CJD122TR13

Manufacturer Central Semiconductor Corp

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

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Type

Parameter

  • HTS Code

    8541.29.00.95

  • Objectid

    1466784283

  • ECCN Code

    EAR99

  • Risk Rank

    8.84

  • Rohs Code

    No

  • VCEsat-Max

    4 V

  • Pbfree Code

    No

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    DARLINGTON

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Case Connection

    COLLECTOR

  • Terminal Finish

    TIN LEAD

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    2

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    not_compliant

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    100

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    8 A

  • Power Dissipation-Max (Abs)

    20 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    100 V

  • Power Dissipation Ambient-Max

    20 W

  • Transition Frequency-Nom (fT)

    4 MHz

  • Collector-Base Capacitance-Max

    200 pF

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Qty

Unit Price

Total Price

3155

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