MJD122T4G

Details

Manufacturer No MJD122T4G

Manufacturer Rochester Electronics LLC

Category Uncategorized

Datasheet Datasheet

Description

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Type

Parameter

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    Qty

    Unit Price

    Total Price

    12882

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    Substitute Products

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    Samsung Semiconductor

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    Samsung Semiconductor

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    ON Semiconductor

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    ON Semiconductor

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    Fairchild Semiconductor Corporation

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    ON Semiconductor

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    MJD122TF

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    MJD122

    Fairchild Semiconductor Corporation

    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

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    Samsung Semiconductor

    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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    Central Semiconductor Corp

    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

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    Fairchild Semiconductor Corporation

    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3

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    Central Semiconductor Corp

    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

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    WEITRON INTERNATIONAL CO., LTD.

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    Jiangsu Changjiang Electronics Technology Co Ltd

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    NJVMJD122T4G

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    MJD122-TP

    Micro Commercial Components

    Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3

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    ON Semiconductor

    8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

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