Details
Manufacturer No MJD122
Manufacturer Motorola Mobility LLC
Category Power Bipolar Transistors
Datasheet Datasheet
Description 8A, 100V, NPN, Si, POWER TRANSISTOR
Price
$1
Type
Parameter
HTS Code
8541.29.00.95
ECCN Code
EAR99
Popularity
0
VCEsat-Max
4 V
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PDSO-G2
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
AMPLIFIER
Turn-off Time-Max (toff)
3500 ns
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
4 MHz
Collector-Base Capacitance-Max
200 pF
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Qty
Unit Price
Total Price
1
$0.97
$0.97
50
$0.92
$46
100
$0.89
$89
1000
$0.85
$850
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