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IPB80N06S2L-06

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Manufacturer No IPB80N06S2L-06

Manufacturer Infineon Technologies AG

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Popularity

    225

  • Pbfree Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Number of Elements

    1

  • Source Content uid

    IPB80N06S2L-06

  • Number of Terminals

    2

  • Package Description

    GREEN, PLASTIC, TO-263, 3 PIN

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    80 A

  • DS Breakdown Voltage-Min

    55 V

  • Operating Temperature-Max

    175°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    250 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    80 A

  • Avalanche Energy Rating (Eas)

    530 mJ

  • Peak Reflow Temperature (Cel)

    245

  • Drain-source On Resistance-Max

    0.0084 Ω

  • Pulsed Drain Current-Max (IDM)

    320 A

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Qty

Unit Price

Total Price

5299

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