Details
Manufacturer No SPB80N06S-08
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Price
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Type
Parameter
HTS Code
8541.29.00.95
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
130
Pbfree Code
No
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Part Package Code
D2PAK
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
SPB80N06S-08
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
80 A
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
700 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0077 Ω
Pulsed Drain Current-Max (IDM)
320 A
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Qty
Unit Price
Total Price
5288
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