Details
Manufacturer No IPB80N06S2-09
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Price
$19.45
Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
117
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Part Package Code
D2PAK
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IPB80N06S2-09
Number of Terminals
2
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
80 A
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
190 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
370 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0088 Ω
Pulsed Drain Current-Max (IDM)
320 A
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Qty
Unit Price
Total Price
1
$18.8665
$18.8665
50
$17.894
$894.7
100
$17.3105
$1731.05
1000
$16.5325
$16532.5
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