Details
Manufacturer No STB85NF55
Manufacturer STMicroelectronics
Category Power Field-Effect Transistors
Datasheet Datasheet
Description 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
73
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Part Package Code
D2PAK
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
STB85NF55
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
80 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
980 mJ
Drain-source On Resistance-Max
0.008 Ω
Pulsed Drain Current-Max (IDM)
320 A
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Qty
Unit Price
Total Price
5297
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