Details
Manufacturer No Q67040-S4199
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
16
Pbfree Code
Yes
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Source Content uid
Q67040-S4199
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
11 A
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
340 mJ
Drain-source On Resistance-Max
0.38 Ω
Pulsed Drain Current-Max (IDM)
22 A
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Unit Price
Total Price
10138
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