SIHB12N60ET1-GE3

Details

Manufacturer No SIHB12N60ET1-GE3

Manufacturer Vishay Siliconix

Category Transistors - FETs, MOSFETs - Single

Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet Datasheet

Description MOSFET N-CH 600V 12A TO263

Price

$1.25458

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Type

Parameter

  • Mfr

    Vishay Siliconix

  • Series

    E

  • Package

    Bulk

  • FET Type

    N-Channel

  • Vgs (Max)

    ±30V

  • Technology

    MOSFET (Metal Oxide)

  • FET Feature

    -

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

  • Product Status

    Active

  • Vgs(th) (Max) @ Id

    4V @ 250µA

  • Base Product Number

    SIHB12

  • Operating Temperature

    -55°C~150°C(TJ)

  • Rds On (Max) @ Id, Vgs

    380mOhm @ 6A, 10V

  • Power Dissipation (Max)

    147W (Tc)

  • Supplier Device Package

    D²PAK (TO-263)

  • Gate Charge (Qg) (Max) @ Vgs

    58 nC @ 10 V

  • Drain to Source Voltage (Vdss)

    600 V

  • Input Capacitance (Ciss) (Max) @ Vds

    937 pF @ 100 V

  • Drive Voltage (Max Rds On, Min Rds On)

    10V

  • Current - Continuous Drain (Id) @ 25°C

    12A (Tc)

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Qty

Unit Price

Total Price

1

$1.21694

$1.21694

50

$1.15421

$57.7105

100

$1.11658

$111.658

1000

$1.06639

$1066.39

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