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FSYC260D3

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Manufacturer No FSYC260D3

Manufacturer Fairchild Semiconductor Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 46A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

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Type

Parameter

  • Objectid

    1546525815

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    9.83

  • Rohs Code

    No

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-CBCC-N3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    CHIP CARRIER

  • Surface Mount

    YES

  • Terminal Form

    NO LEAD

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN LEAD

  • Terminal Position

    BOTTOM

  • Number of Elements

    1

  • Source Content uid

    FSYC260D3

  • Number of Terminals

    3

  • Package Description

    CHIP CARRIER, R-CBCC-N3

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    CERAMIC, METAL-SEALED COFIRED

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    46 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    200 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    208 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    46 A

  • Drain-source On Resistance-Max

    0.05 Ω

  • Pulsed Drain Current-Max (IDM)

    138 A

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Qty

Unit Price

Total Price

5191

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