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SHD218513

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Manufacturer No SHD218513

Manufacturer Sensitron Semiconductors

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SHD-5, 3 PIN

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Type

Parameter

  • YTEOL

    6.4

  • Objectid

    2030580914

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    7.97

  • Rohs Code

    No

  • Pbfree Code

    No

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-MXSO-N3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    NO LEAD

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN LEAD

  • Country Of Origin

    USA

  • Terminal Position

    UNSPECIFIED

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-MXSO-N3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    METAL

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    11 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    600 V

  • Operating Temperature-Max

    150°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    430 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    11 A

  • Drain-source On Resistance-Max

    0.6 Ω

  • Pulsed Drain Current-Max (IDM)

    44 A

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Qty

Unit Price

Total Price

3974

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