RoHS

Details

Brand

Infineon Technologies

Width

7.1 mm

Height

0.74 mm

Length

9.15 mm

Fall Time

42 ns

Packaging

Reel

Rise Time

71 ns

Technology

Si

Subcategory

MOSFETs

Unit Weight

0.006227 oz

Channel Mode

Enhancement

Manufacturer

Infineon

Product Type

MOSFET

Configuration

Single

Qualification

AEC-Q101

Mounting Style

SMD/SMT

Package / Case

DirectFET-L8

Transistor Type

1 N-Channel

Product Category

MOSFET

Qg - Gate Charge

220 nC

Number of Channels

1 Channel

Transistor Polarity

N-Channel

Pd - Power Dissipation

125 W

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Typical Turn-On Delay Time

21 ns

Typical Turn-Off Delay Time

56 ns

Id - Continuous Drain Current

270 A

Maximum Operating Temperature

175°C

Minimum Operating Temperature

-55°C

Forward Transconductance - Min

280 S

Rds On - Drain-Source Resistance

1 mOhms

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.8 V

Factory Pack Quantity: Factory Pack Quantity

4000