Details
Manufacturer No FCB11N60
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT, D2PAK-3
Price
Call
Type
Parameter
HTS Code
8541.29.00.95
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
366
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Part Package Code
TO-263
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
FCB11N60
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
340 mJ
Drain-source On Resistance-Max
0.38 Ω
Pulsed Drain Current-Max (IDM)
33 A
Send RFQ
Qty
Unit Price
Total Price
13204
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method