AP18N20GH-HF

Details

Manufacturer No AP18N20GH-HF

Manufacturer Advanced Power Electronics Corp

Category Power Field-Effect Transistors

Description TRANSISTOR 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

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Type

Parameter

ECCN Code

EAR99
Pin Count

4
Popularity

63
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-252
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Part Package Code

TO-252
Terminal Position

SINGLE
Number of Elements

1
Source Content uid

AP18N20GH-HF
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

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Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

compliant
Drain Current-Max (ID)

18 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

200 V
Operating Temperature-Max

150°C
Transistor Element Material

SILICON
Drain-source On Resistance-Max

0.17 Ω
Pulsed Drain Current-Max (IDM)

60 A

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Qty

Unit Price

Total Price

11999

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