Details
Manufacturer No UF640G-T2Q-R
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Price
Call
Type
Parameter
YTEOL
5.95
Objectid
8146969749
ECCN Code
EAR99
Risk Rank
6.67
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
TO-262, 3 PIN
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
18 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
200 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
242 mJ
Drain-source On Resistance-Max
0.18 Ω
Pulsed Drain Current-Max (IDM)
72 A
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Qty
Unit Price
Total Price
5548
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