UF640-TN3-T

Details

Manufacturer No UF640-TN3-T

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Description Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

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Type

Parameter

YTEOL

2
Objectid

1017228770
ECCN Code

EAR99
Pin Count

4
Risk Rank

6.63
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-252
JESD-609 Code

e0
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Terminal Finish

TIN LEAD
Part Package Code

TO-252
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Active
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

compliant
Drain Current-Max (ID)

18 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

200 V
Transistor Element Material

SILICON
Avalanche Energy Rating (Eas)

580 mJ
Drain-source On Resistance-Max

0.18 Ω
Pulsed Drain Current-Max (IDM)

72 A

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Qty

Unit Price

Total Price

5557

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