UF640L-TN3-R

Details

Manufacturer No UF640L-TN3-R

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Description Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

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Type

Parameter

ECCN Code

EAR99
Pin Count

4
Rohs Code

Yes
Popularity

0
Subcategory

FET General Purpose Power
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-252
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Part Package Code

TO-252
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

compliant
Drain Current-Max (ID)

18 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

200 V
Operating Temperature-Max

150°C
Power Dissipation-Max (Abs)

83 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

18 A
Avalanche Energy Rating (Eas)

580 mJ
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Drain-source On Resistance-Max

0.18 Ω
Pulsed Drain Current-Max (IDM)

72 A
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Qty

Unit Price

Total Price

12001

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