Details
Manufacturer No 5N40L-TN3-R
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Package SMALL OUTLINE, R-PSSO-G2
Datasheet Datasheet
Description Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Price
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Type
Parameter
YTEOL
6.3
Objectid
1052508578
ECCN Code
EAR99
Pin Count
4
Risk Rank
7.55
Rohs Code
Yes
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-252
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
54 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
300 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
1.4 Ω
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
3101
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