3N40L-TN3-R

Details

Manufacturer No 3N40L-TN3-R

Manufacturer STMicroelectronics

Category Integrated Circuits (ICs)

Datasheet Datasheet

Description

Price

Call

Add To Cart RFQ Buy Now

Type

Parameter

  • RoHS

  • Inventory

    In Stock

  • Pin Count:

    4

  • Risk Rank:

    5.59

  • Rohs Code:

    Yes

  • Subcategory:

    FET General Purpose Power

  • JESD-30 Code:

    R-PSSO-G2

  • Manufacturer:

    Unisonic Technologies Co Ltd

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Ihs Manufacturer:

    UNISONIC TECHNOLOGIES CO LTD

  • Part Package Code:

    TO-252

  • Terminal Position:

    SINGLE

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code:

    Active

  • Package Body Material:

    PLASTIC/EPOXY

  • Reach Compliance Code:

    compliant

  • Manufacturer Part Number:

    3N40L-TN3-R

  • Operating Temperature-Max:

    150°C

  • Peak Reflow Temperature (Cel):

    NOTSPECIFIED

Send RFQ

Qty

Unit Price

Total Price

9256

call

call

Substitute Products

SUD19N20-90-E3

Vishay Intertechnologies

Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK

Send RFQ

3N40G-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

Send RFQ

IPD30N06S2-23

Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Send RFQ

UT12N10L-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

UT2N10G-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

Send RFQ

10N30G-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

22N20L-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 22A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ

12N10G-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Send RFQ

5N40G-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

Send RFQ

12N10L-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Send RFQ

UT2N10L-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Send RFQ

UT2N10G-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Send RFQ

12N10L-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Send RFQ

5N40L-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ

4N50G-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

Send RFQ

1N50ZL-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

UTT60N06L-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ

4N50L-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ

2N90L-TN3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ

6N40L-TN3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Send RFQ
Feature Products

As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.

Payment Method

©Copyright 2023 IZSOURCE All Rights Reserved