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4N50G-TN3-R

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Manufacturer No 4N50G-TN3-R

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

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Type

Parameter

  • YTEOL

    6.4

  • Objectid

    1052508521

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Risk Rank

    7.77

  • Rohs Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-252

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Part Package Code

    TO-252

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    2

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    4 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    500 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    52 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    4 A

  • Avalanche Energy Rating (Eas)

    216 mJ

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Drain-source On Resistance-Max

    2 Ω

  • Pulsed Drain Current-Max (IDM)

    16 A

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

3113

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