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UT12N10L-TM3-T

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Manufacturer No UT12N10L-TM3-T

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,

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Type

Parameter

  • YTEOL

    5.15

  • Objectid

    1827786754

  • ECCN Code

    EAR99

  • Risk Rank

    7.63

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSIP-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-251

  • Package Shape

    RECTANGULAR

  • Package Style

    IN-LINE

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    IN-LINE, R-PSIP-T3

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    12 A

  • DS Breakdown Voltage-Min

    100 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    43 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    12 A

  • Drain-source On Resistance-Max

    0.18 Ω

  • Pulsed Drain Current-Max (IDM)

    44 A

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Qty

Unit Price

Total Price

3924

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call

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