RFQ
Cart

UT2304L-AE2-R

Details

Manufacturer No UT2304L-AE2-R

Manufacturer Unisonic Technologies Co Ltd

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3

Price

Call

Add To Cart RFQ Buy Now

Type

Parameter

  • YTEOL

    5.17

  • HTS Code

    8541.29.00.95

  • Objectid

    1080465392

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    7.8

  • Rohs Code

    Yes

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-236

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Part Package Code

    SOT-23

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Active

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    2.5 A

  • DS Breakdown Voltage-Min

    30 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    1.4 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    2.5 A

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Power Dissipation Ambient-Max

    1.4 W

  • Drain-source On Resistance-Max

    0.117 Ω

  • Pulsed Drain Current-Max (IDM)

    10 A

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

Send RFQ

Qty

Unit Price

Total Price

4339

call

call

Substitute Products

SI2300DS-T1-GE3

Vishay Intertechnologies

Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R

Send RFQ

SI2302DDS-T1-GE3

Vishay Intertechnologies

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Send RFQ

SI2342DS-T1-GE3

Vishay Intertechnologies

TRANSISTOR 6 A, 8 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Send RFQ

SI2338DS-T1-GE3

Vishay Intertechnologies

TRANSISTOR 6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Send RFQ

SI2312CDS-T1-GE3

Vishay Intertechnologies

TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Send RFQ

SI2302CDS-T1-GE3

Vishay Intertechnologies

TRANSISTOR 2600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Send RFQ

SI2336DS-T1-GE3

Vishay Intertechnologies

N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

Send RFQ

SI2302CDS-T1-E3

Vishay Intertechnologies

TRANSISTOR 2600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Send RFQ

SI2328DS-T1-E3

Vishay Intertechnologies

Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R

Send RFQ

SI2304DDS-T1-GE3

Vishay Intertechnologies

TRANSISTOR 3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Send RFQ

SI2324DS-T1-GE3

Vishay Intertechnologies

Trans MOSFET N-CH 100V 1.6A T/R

Send RFQ

SI2328DS-T1-GE3

Vishay Intertechnologies

Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R

Send RFQ

UT2304G-AE2-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE PACKAGE-3

Send RFQ

UT2304G-AE3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3

Send RFQ

UT2304L-AE3-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3

Send RFQ

UF601G-AE2-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

UF601L-AE2-R

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

BS807

Diodes Incorporated

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Send RFQ

IRLML6302

Infineon Technologies AG

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ

IRLML2402

Infineon Technologies AG

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Send RFQ
Feature Products

As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.

  • New Products

Payment Method

©Copyright 2023 IZSOURCE All Rights Reserved