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UT2304G-AE3-R
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Manufacturer No UT2304G-AE3-R
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3
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Type
Parameter
YTEOL
5.17
HTS Code
8541.29.00.95
Objectid
1017228804
ECCN Code
EAR99
Pin Count
3
Risk Rank
7.78
Rohs Code
Yes
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
2.5 A
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
1.4 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
2.5 A
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Power Dissipation Ambient-Max
1.4 W
Drain-source On Resistance-Max
0.117 Ω
Pulsed Drain Current-Max (IDM)
10 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
4353
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