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IRLML2402

Details

Manufacturer No IRLML2402

Manufacturer 英飞凌-Infineon

Category ≤30V NMOS

Datasheet Datasheet

Description 20V 单个 N 通道 HEXFET Power MOSFET, 采用 Micro 3封装

Price

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Type

Parameter

  • OPN

    IRLML2402TRPBF

  • VDS max

    20 V

  • VGS(th)

  • Polarity

    N

  • Technology

    IR MOSFET™

  • QG typ @10V

  • VGS(th) max

  • VGS(th) min

    0.7 V

  • Package name

    SOT23

  • QG typ @4.5V

    2.6 nC

  • Qualification

    Non-Automotive

  • ID @25°C max

    1.2 A

  • Product Status

    active

  • Special Features

    Small Signal

  • RDS (on) @10V max

  • RDS (on) @4.5V max

    250 mΩ

  • Operating Temperature max

  • Operating Temperature min

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Qty

Unit Price

Total Price

6120

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Substitute Products

IRLML2402PBF

Infineon

SOT-23 N-CH 20V 1.2A

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IRLML2402GPBF

Infineon

SOT-23 N-CH 20V 1.2A

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IRLML2402TRPBF-1

Infineon

SOT-23 N-CH 20V 1.2A

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SI2302CDS-T1-GE3

Vishay

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IRLML2402TRHR

International Rectifier

Small Signal Field-Effect Transistor, 0.0012A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

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DMN2112SN-7

Diodes Incorporated

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SC-59, 3 PIN

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IRLML2402PBF

International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3

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IRLML2402GTRPBF

International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

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IRLML2402GPBF

Infineon Technologies AG

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

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IRLML2402TRPBF

International Rectifier

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN

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