SUM110N10-09-E3

Details

Manufacturer No SUM110N10-09-E3

Manufacturer Vishay

Category Power Field-Effect Transistors

Description TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power

Price

$4.09

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Type

Parameter

ECCN Code

EAR99
Pin Count

4
Rohs Code

Yes
Popularity

1982
Pbfree Code

Yes
Subcategory

FET General Purpose Power
JESD-30 Code

R-PSSO-G2
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-263AB
JESD-609 Code

e3
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Case Connection

DRAIN
Terminal Finish

MATTE TIN OVER NICKEL
Part Package Code

D2PAK
Terminal Position

SINGLE
Number of Elements

1
Number of Terminals

2
Package Description

SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Reach Compliance Code

unknown
Drain Current-Max (ID)

110 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

100 V
Operating Temperature-Max

175°C
Moisture Sensitivity Level

1
Power Dissipation-Max (Abs)

437.5 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

110 A
Drain-source On Resistance-Max

0.0095 Ω
Pulsed Drain Current-Max (IDM)

440 A

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Qty

Unit Price

Total Price

$3.9673

$3.7628

$188.14

100

$3.6401

$364.01

1000

$3.4765

$3476.5

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