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STB120NF10

Details

Manufacturer No STB120NF10

Manufacturer STMicroelectronics

Category Power Field-Effect Transistors

Datasheet Datasheet

Description 110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Popularity

    1336

  • Pbfree Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Source Content uid

    STB120NF10

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    110 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    100 V

  • Operating Temperature-Max

    175°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    312 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    120 A

  • Avalanche Energy Rating (Eas)

    550 mJ

  • Peak Reflow Temperature (Cel)

    245

  • Drain-source On Resistance-Max

    0.0105 Ω

  • Pulsed Drain Current-Max (IDM)

    440 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Total Price

5247

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