Details
Manufacturer No SSR3055LA
Manufacturer Fairchild Semiconductor Corporation
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 8A I(D), 60V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Price
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Type
Parameter
Objectid
1475140532
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.81
Rohs Code
No
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
SSR3055LA
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
18 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
8 A
Avalanche Energy Rating (Eas)
55 mJ
Drain-source On Resistance-Max
0.165 Ω
Pulsed Drain Current-Max (IDM)
28 A
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Qty
Unit Price
Total Price
2001
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