SIHFR020TR-GE3

Details

Manufacturer No SIHFR020TR-GE3

Manufacturer Vishay

Category MOSFETs

Package DPAK

Datasheet Datasheet

Description Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK T/R

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Type

Parameter

Tab

Tab
PPAP

No
Category

Power MOSFET
Mounting

Surface Mount
ECCN (US)

EAR99
Packaging

Tape and Reel
Pin Count

3
Automotive

No
PCB changed

2
Part Status

Active
Channel Mode

Enhancement
Channel Type

N
Configuration

Single
Package Width

6.22(Max)
Package Height

2.38(Max)
Package Length

6.73(Max)
Supplier Package

DPAK
Maximum IDSS (uA)

25
Standard Package Name

TO-252
Typical Fall Time (ns)

42
Typical Rise Time (ns)

58
Number of Elements per Chip

1
Maximum Power Dissipation (mW)

2500
Typical Gate Charge @ 10V (nC)

25(Max)
Typical Gate Charge @ Vgs (nC)

25(Max)@10V
Maximum Gate Source Voltage (V)

±20
Typical Output Capacitance (pF)

360
Typical Turn-On Delay Time (ns)

13
Maximum Drain Source Voltage (V)

60
Typical Gate Plateau Voltage (V)

5.1
Typical Turn-Off Delay Time (ns)

25
Maximum Diode Forward Voltage (V)

1.5
Typical Gate to Drain Charge (nC)

11(Max)
Maximum Gate Threshold Voltage (V)

4
Minimum Gate Threshold Voltage (V)

2
Typical Gate to Source Charge (nC)

5.8(Max)
Typical Reverse Recovery Time (ns)

88
Maximum Operating Temperature (°C)

150
Minimum Operating Temperature (°C)

-55
Maximum Continuous Drain Current (A)

14
Operating Junction Temperature (°C)

-55to150
Typical Input Capacitance @ Vds (pF)

640@25V
Typical Reverse Recovery Charge (nC)

290
Maximum Drain Source Resistance (MOhm)

100@10V
Maximum Gate Source Leakage Current (nA)

100
Maximum Positive Gate Source Voltage (V)

20
Maximum Pulsed Drain Current @ TC=25°C (A)

56
Maximum Power Dissipation on PCB @ TC=25°C (W)

2.5
Typical Reverse Transfer Capacitance @ Vds (pF)

79@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

50

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Qty

Unit Price

Total Price

28520

call

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