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SD1015E3

Details

Manufacturer No SD1015E3

Manufacturer Microsemi FPGA & SoC

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN

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Type

Parameter

  • Objectid

    8074197270

  • ECCN Code

    EAR99

  • Risk Rank

    8.74

  • JESD-30 Code

    O-PRPM-F4

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • Package Shape

    ROUND

  • Package Style

    POST/STUD MOUNT

  • Surface Mount

    NO

  • Terminal Form

    FLAT

  • Terminal Position

    RADIAL

  • Number of Elements

    1

  • Number of Terminals

    4

  • Package Description

    POST/STUD MOUNT, O-PRPM-F4

  • Part Life Cycle Code

    Obsolete

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • Highest Frequency Band

    VERY HIGH FREQUENCY BAND

  • Transistor Application

    AMPLIFIER

  • Collector Current-Max (IC)

    1 A

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    35 V

  • Transition Frequency-Nom (fT)

    108 MHz

  • Collector-Base Capacitance-Max

    250 pF

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Qty

Unit Price

Total Price

3037

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