2N3375

Details

Manufacturer No 2N3375

Manufacturer NJS

Category 射频双极晶体管

Datasheet Datasheet

Description Trans GP BJT NPN 40V 1.5A 3-Pin TO-60

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Type

Parameter

  • Type

    NPN

  • Output Power

    3(Min)W

  • Configuration

    Single

  • Minimum DC Current Gain

    10@250mA@5V

  • Number of Elements per Chip

    1

  • Maximum DC Collector Current

    1.5A

  • Maximum Emitter Base Voltage

    4V

  • Maximum Transition Frequency

    400MHz

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -65°C

  • Maximum Collector Base Voltage

    65V

  • Maximum Collector Emitter Voltage

    40V

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Qty

Unit Price

Total Price

25407

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Substitute Products

2N3375

New Jersey Semiconductor Products, Inc.

Trans GP BJT NPN 40V 1.5A 3-Pin TO-60

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2N3375

Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, ISOLATED TO-60, 3 PIN

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2N3375

Semitronics Corp

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN

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JANTX2N3375

Motorola Semiconductor Products

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-60, TO-60, 3 PIN

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2N3375

NXP Semiconductors

TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60, TO-60, 3 PIN, BIP RF Power

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2N3375

Microsemi FPGA & SoC

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN

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2N3375

Space Power Electronics Inc

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN

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SD1050

Advanced Power Technology

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN

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2N3375

Motorola Semiconductor Products

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN

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