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VHB80-12
Details
Manufacturer No VHB80-12
Manufacturer Advanced Semiconductor Inc
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6
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Type
Parameter
YTEOL
5.2
Objectid
1503189672
ECCN Code
EAR99
Pin Count
6
Risk Rank
7.63
Subcategory
Other Transistors
JESD-30 Code
O-CXFM-F6
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Country Of Origin
USA
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
6
Package Description
FLANGE MOUNT, O-CXFM-F6
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
200°C
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
270 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
16 V
Collector-Base Capacitance-Max
380 pF
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Qty
Unit Price
Total Price
2452
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