PDTD123YT,215

Details

Manufacturer No PDTD123YT,215

Manufacturer NXP Semiconductors

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description PDTD123Y series - NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm TO-236 3-Pin

Price

$0.02

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Brand Name

    NXP Semiconductor

  • Popularity

    1357

  • Subcategory

    BIP General Purpose Small Signal

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • JEDEC-95 Code

    TO-236AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Terminal Finish

    TIN

  • Part Package Code

    TO-236

  • Terminal Position

    DUAL

  • Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 0.21

  • Number of Elements

    1

  • Source Content uid

    PDTD123YT,215

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-G3

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    70

  • Manufacturer Package Code

    SOT23

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    0.5 A

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    0.25 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    50 V

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

1

$0.0194

$0.0194

50

$0.0184

$0.92

100

$0.0178

$1.78

1000

$0.017

$17

Substitute Products

PDTD123YT

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Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon

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PDTD123ET

Philips Semiconductors

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PDTD123TK

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PDTD123TS

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PDTD123ET,215

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PDTD123E_SER - NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3-Pin

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PDTD123TT,215

NXP Semiconductors

PDTD123T_SER - NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin

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PDTD123EK

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Small Signal Bipolar Transistor

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PDTD123ES

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PDTD123TT

NXP Semiconductors

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

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BCR505

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PDTD123YT,215

Nexperia

TRANS PREBIAS NPN 0.25W(1/4W) TO236AB

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PDTD123TT,215

NXP

TO-236AB NPN 50V 500mA

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PDTD123ET,215

NXP

TO-236AB NPN 50V 500mA

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PDTD123YT,215

NXP

TO-236AB NPN 50V 500mA

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PDTD123ET,215

Nexperia

TRANS PREBIAS NPN 0.25W(1/4W) TO236AB

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PDTD123TT,215

Nexperia

TRANS PREBIAS NPN 0.25W(1/4W) TO236AB

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