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PDTD123ET

Details

Manufacturer No PDTD123ET

Manufacturer NXP

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Popularity

    0

  • Pbfree Code

    Yes

  • Subcategory

    BIP General Purpose Small Signal

  • JESD-30 Code

    R-PDSO-G3

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • JEDEC-95 Code

    TO-236AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Terminal Finish

    Tin (Sn)

  • Part Package Code

    SOT-23

  • Terminal Position

    DUAL

  • Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Number of Elements

    1

  • Source Content uid

    PDTD123ET

  • Number of Terminals

    3

  • Package Description

    PLASTIC PACKAGE-3

  • Part Life Cycle Code

    Transferred

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    compliant

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    40

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    0.5 A

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    0.25 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    50 V

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

15640

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