Details
Manufacturer No PDTD123EK,115
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-236-3, SC-59, SOT-23-3
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
RoHS:
Width
Brand:
Height
Length
Weight
hFE Min
Polarity
ECCN Code
Inventory
9760
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
Published
2009
REACH SVHC
Part Status
Obsolete
Power - Max
250mW
RoHS Status
ROHS3 Compliant
Subcategory:
JESD-609 Code
Manufacturer:
Mounting Type
Surface Mount
Product Type:
Terminal Form
Configuration:
Number of Pins
Package / Case
TO-236-3, SC-59, SOT-23-3
Contact Plating
Mounting Style:
Package / Case:
Part # Aliases:
Terminal Finish
Transistor Type
NPN - Pre-Biased
Base Part Number
PDTD123
Factory Lead Time
Power Dissipation
Product Category:
Terminal Position
Additional Feature
Max Output Current
Number of Elements
Radiation Hardening
Resistor - Base (R1)
2.2 kOhms
Transistor Polarity:
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Number of Terminations
Transistor Application
Pd - Power Dissipation:
Supplier Device Package
SMT3; MPAK
Typical Input Resistor:
Typical Resistor Ratio:
Operating Supply Voltage
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Emitter- Base Voltage VEBO:
Resistor - Emitter Base (R2)
2.2 kOhms
Continuous Collector Current:
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)
500mA
Maximum Operating Temperature:
Minimum Operating Temperature:
DC Collector/Base Gain hfe Min:
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
500nA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max:
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
Factory Pack Quantity:Factory Pack Quantity:
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Qty
Unit Price
Total Price
38479
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